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this is information on a product in full production. october 2013 docid025111 rev 2 1/24 stgb10h60df, stgf10h60df, STGP10H60DF trench gate field-stop igbt, h series 600 v, 10 a high speed datasheet - production data figure 1. internal schematic diagram features ? high speed switching ? tight parameters distribution ? safe paralleling ? low thermal resistance ? short-circuit rated ? ultrafast soft recovery antiparallel diode applications ? motor control ? ups, pfc description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. to-220 d2pak 1 2 3 tab 1 3 tab to-220fp 1 2 3 c (2, tab) e (3) g (1) table 1. device summary order codes marking packages packaging stgb10h60df gb10h60df d2pak tape and reel stgf10h60df gf10h60df to-220fp tube STGP10H60DF gp10h60df to-220 tube www.st.com
contents stgb10h60df, stgf10h60df, STGP10H60DF 2/24 docid025111 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
docid025111 rev 2 3/24 stgb10h60df, stgf10h60df, STGP10H60DF electrical ratings 24 1 electrical ratings table 2. absolute maximum ratings symbol parameter to-220 d2pak to-220fp unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 20 20 (1) 1. limited by maximum junction temperature . a continuous collector current at t c = 100 c 10 10 (1) a i cp (2) 2. pulse width limited by maximum junction temperature. pulsed collector current 40 40 (1) a v ge gate-emitter voltage 20 v i f continuous forward current t c = 25 c 20 20 (1) a continuous forward current at t c = 100 c 10 10 (1) i fp (2) pulsed forward current 40 40 (1) a p tot total dissipation at t c = 25 c 115 30 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 table 3. thermal data symbol parameter to-220 d2pak to-220fp unit r thjc thermal resistance junction-case igbt 1.3 5 c/w r thjc thermal resistance junction-case diode 2.78 6.25 c/w r thja thermal resistance junction-ambient 62.5 c/w
electrical characteristics stgb10h60df, stgf10h60df, STGP10H60DF 4/24 docid025111 rev 2 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 10 a 1.5 1.95 v v ge = 15 v, i c = 10 a t j = 125 c 1.65 v ge = 15 v, i c = 10 a t j = 175 c 1.7 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5.0 6.0 7.0 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -1300- pf c oes output capacitance - 60 - pf c res reverse transfer capacitance -30-pf q g total gate charge v cc = 480 v, i c = 10 a, v ge = 15 v -57-nc q ge gate-emitter charge - 8 - nc q gc gate-collector charge - 27 - nc
docid025111 rev 2 5/24 stgb10h60df, stgf10h60df, STGP10H60DF electrical characteristics 24 table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 10 a, r g = 10 , v ge = 15 v 19.5 ns t r current rise time 6.9 ns (di/dt)on turn-on current slope 1170 a/ s t d(on) turn-on delay time v ce = 400 v, i c = 10 a, r g = 10 , v ge = 15 v t j = 175 c 20 ns t r current rise time 6.8 ns (di/dt)on turn-on current slope 1176 a/ s t r(voff) off voltage rise time v ce = 400 v, i c = 10 a, r g = 10 , v ge = 15 v 19.6 ns t d(off) turn-off delay time 103 ns t f current fall time 73 ns t r(voff) off voltage rise time v ce = 400 v, i c = 10 a, r g = 10 , v ge = 15 v t j = 175 c 28 ns t d(off) turn-off delay time 104 ns t f current fall time 110 ns t sc short-circuit withstand time v cc 360 v, v ge = 15 v, r g = 10 35 s table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses v ce = 400 v, i c = 10 a, r g = 10 , v ge = 15 v -83- j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 140 - j e ts total switching losses - 223 - j eon (1) turn-on switching losses v ce = 400 v, i c = 10 a, r g = 10 , v ge = 15 v t j = 175 c - 148 - j e off (2) turn-off switching losses - 214 - j e ts total switching losses - 362 - j
electrical characteristics stgb10h60df, stgf10h60df, STGP10H60DF 6/24 docid025111 rev 2 table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 10 a i f = 10 a, t j = 175 c - 1.7 1.3 2.2 v v t rr reverse recovery time v r = 60 v; if = 10 a; di f /dt = 100 a / s - 107 ns q rr reverse recovery charge - 120 nc i rrm reverse recovery current - 2.24 a t rr reverse recovery time v r = 60 v; if = 10 a; di f /dt = 100 a / s t j = 175 c - 161 ns q rr reverse recovery charge - 362 nc i rrm reverse recovery current - 4.5 a
docid025111 rev 2 7/24 stgb10h60df, stgf10h60df, STGP10H60DF electrical characteristics 24 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature for d 2 pak and to-220 figure 3. collector current vs. case temperature for d 2 pak and to-220 p tot 60 40 20 0 025 t c ( c ) (w) 100 80 50 75 100 175 125 150 120 140 gipd281020131339fsr i c 10 5 0 025 t c ( c ) (a) 100 15 50 75 20 175 v ge 15v, t j 175 c 125 150 gipd011020131146fsr figure 4. power dissipation vs. case temperature for to-220fp figure 5. collector current vs. case temperature for to-220fp figure 6. output characteristics (t j = 25c) figure 7. output characteristics (t j = 175c) p tot 10 0 0 t c ( c ) (w) 100 20 50 150 30 gipd281020131351fsr i c 10 5 0 0 t c ( c ) (a) 100 15 50 v ge 15v, t j 175 c 150 gipd281020131401fsr i c 10 0 0 1 v ce (v) (a) 4 20 2 3 v ge =15v 30 9v 11v gipd281020131405fsr i c 10 0 0 1 v ce (v) (a) 4 20 2 3 v ge =15v 30 9v 11v 7v 13v gipd281020131411fsr
electrical characteristics stgb10h60df, stgf10h60df, STGP10H60DF 8/24 docid025111 rev 2 figure 8. v ce(sat) vs. junction temperature figure 9. v ce(sat) vs. collector current figure 10. collector current vs. switching frequency for d 2 pak and to-220 figure 11. collector current vs. switching frequency for to-220fp v ce(sat) 1.8 1.6 1.4 1.2 -50 t j ( c ) (v) 100 2 050 2.2 150 v ge = 15v i c = 20a i c = 10a i c = 5a 1 gipd281020131418fsr v ce(sat) 1.6 1.4 1.2 2 i c ( a ) (v) 14 1.8 610 2 18 2.2 1 v ge = 15v t j = -40 c t j = 25 c t j = 175 c gipd281020131424fsr 0 10 20 30 40 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c gipd281020131430fsr gipd281020131440fsr 0 5 10 15 110 ic [a] f [khz] rectangular current shape, (duty cycle=0.5, v cc = 400v, r g =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c figure 12. forward bias safe operating area for d 2 pak and to-220 figure 13. forward bias safe operating area for to-220fp i c 10 1 0.1 1 v ce ( v ) (a) 10 10 s 100 s 1 ms single pulse tc= 25c, t j <= 175c v ge = 15v 100 gipd281020131452fsr i c 10 1 0.1 1 v ce ( v ) (a) 10 10 s 100 s 1 ms single pulse tc= 25c, t j <= 175c v ge = 15v 100 gipd281020131505fsr
docid025111 rev 2 9/24 stgb10h60df, stgf10h60df, STGP10H60DF electrical characteristics 24 figure 14. transfer characteristics figure 15. diode v f vs. forward current i c 15 10 5 0 6 7 v ge (v) (a) 10 20 8 9 25 t j =175c 30 35 t j =-40c t j =25c v ce =5v gipd281020131513fsr v f 2.1 1.7 1.3 0.9 4 i f ( a ) (v) 8 t j = 175c 12 16 20 t j = 25c t j = -40c gipd281020131551fsr figure 16. normalized v ge(th) vs junction temperature figure 17. normalized v (br)ces vs. junction temperature v ge(th) 1.1 1.0 0.6 -50 t j ( c ) (norm) 0 50 100 150 i c = 1ma v ce = v ge 0.7 0.8 0.9 gipd281020131600fsr v (br)ces 1.1 1.0 0.9 -50 t j ( c ) (norm) 0 50 100 150 i c = 2ma gipd041020131502fsr figure 18. capacitance variation figure 19. gate charge vs. gate-emitter voltage c 10 v ce (v) (pf) 0.1 1 10 c ies 100 1000 c oes c res gipd281020131602fsr v ge 8 0 q g (n c ) (v) 020 i c = 10a i ge = 1ma v cc = 480v 4 40 12 60 16 gipd281020131606fsr
electrical characteristics stgb10h60df, stgf10h60df, STGP10H60DF 10/24 docid025111 rev 2 figure 20. switching loss vs collector current figure 21. switching loss vs gate resistance e 0 i c (a) (j) 048 100 12 16 200 e on 300 v cc = 400v, v ge = 15v, r g = 10, t j = 175c 20 e off gipd281020131611fsr e 100 r g () (j) 01020 140 180 220 30 40 260 e off v cc = 400 v, v ge = 15 v, i c = 10 a, t j = 175 c e on gipd281020131618fsr figure 22. switching loss vs temperature figure 23. switching loss vs collector-emitter voltage e 0 t j ( c ) (j) -50 0 50 50 100 150 100 150 e off v cc = 400v, v ge = 15v, r g = 10, i c = 10a e on 200 gipd281020131623fsr e 0 v ce ( v ) (j) 200 300 400 50 100 150 e off t j = 175c, v ge = 15v, r g = 10, i c = 10a 200 250 e on 250 350 450 gipd281020131630fsr
docid025111 rev 2 11/24 stgb10h60df, stgf10h60df, STGP10H60DF electrical characteristics 24 figure 24. short circuit time and current vs v ge figure 25. switching times vs. collector current tsc 10 8 6 10 v ge (v) 12 (s) 11 v cc = 360v, r g = 10 4 t sc i sc 13 12 i sc (a) 100 50 150 200 14 14 gipd281020131634fsr t i c ( a ) (ns) 0 4 8 10 12 t f t j = 175c, v ge = 15v, r g = 10, v cc = 400v t doff 100 t r t don 16 gipd281020131641fsr figure 26. switching times vs. gate resistance figure 27. reverse recovery current vs. diode current slope t 1 r g ( ) (ns) 01020 10 30 t f t j = 175c, v ge = 15v, i c = 10a, v cc = 400v 40 100 t don t doff t r gipd281020131655fsr i rm 0 di/dt(a/ s ) (a) 0 200 400 8 600 i f = 10a, v r = 400v 800 12 =175c =25c 16 4 t j t j 20 gipd281020131713fsr figure 28. reverse recovery time vs. diode current slope figure 29. reverse recovery charge vs. diode current slope t rr 0 di/dt(a/ s ) (s) 0 200 400 80 600 i f = 10a, v r = 400v 800 120 =175c =25c 160 40 t j t j gipd281020131720fsr q rr 0 di/dt(a/ s ) (nc) 0 200 400 300 600 i f = 10a, v r = 400v 800 400 =175c =25c 200 t j t j 100 500 gipd281020131724fsr
electrical characteristics stgb10h60df, stgf10h60df, STGP10H60DF 12/24 docid025111 rev 2 figure 30. reverse recovery energy vs. diode current slope e rr 20 di/dt(a/ s ) (j) 0 200 400 80 600 i f = 10a, v r = 400v 800 120 =175c =25c 40 140 t j t j 60 100 gipd281020131728fsr
docid025111 rev 2 13/24 stgb10h60df, stgf10h60df, STGP10H60DF electrical characteristics 24 figure 31. thermal impedance for igbt figure 32. thermal impedance for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
test circuits stgb10h60df, stgf10h60df, STGP10H60DF 14/24 docid025111 rev 2 3 test circuits figure 33. test circuit for inductive load switching figure 34. gate charge test circuit figure 35. switching waveform figure 36. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
docid025111 rev 2 15/24 stgb10h60df, stgf10h60df, STGP10H60DF package mechanical data 24 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. d2pak mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stgb10h60df, stgf10h60df, STGP10H60DF 16/24 docid025111 rev 2 figure 37. d2pak drawing figure 38. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid025111 rev 2 17/24 stgb10h60df, stgf10h60df, STGP10H60DF package mechanical data 24 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stgb10h60df, stgf10h60df, STGP10H60DF 18/24 docid025111 rev 2 figure 39. to-220fp drawing 7012510_rev_k_b
docid025111 rev 2 19/24 stgb10h60df, stgf10h60df, STGP10H60DF package mechanical data 24 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stgb10h60df, stgf10h60df, STGP10H60DF 20/24 docid025111 rev 2 figure 40. to-220 type a drawing bw\sh$b5hyb7
docid025111 rev 2 21/24 stgb10h60df, stgf10h60df, STGP10H60DF packaging mechanical data 24 5 packaging mechanical data table 12. d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3
packaging mechanical data stgb10h60df, stgf10h60df, STGP10H60DF 22/24 docid025111 rev 2 figure 41. tape figure 42. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid025111 rev 2 23/24 stgb10h60df, stgf10h60df, STGP10H60DF revision history 24 6 revision history table 13. document revision history date revision changes 12-aug-2013 1 initial release. 31-oct-2013 2 document status promoted from preliminary to production data. inserted section 2.1: electrical characteristics (curves) . minor text changes.
stgb10h60df, stgf10h60df, STGP10H60DF 24/24 docid025111 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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